Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Recent advancements in power electronic switches provide effective control and operational stability of grid systems. Junction temperature is a crucial parameter power-switching semiconductor devices, which needs monitoring to facilitate reliable operation thermal electronics circuits ensure performance. Over the years, various junction measurement techniques have been developed, engaging both non-optical optical-based methods, highlighting their challenges. This review focuses on several optical sensing-based measuring used for devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) insulated-gate bipolar (IGBTs). A comprehensive summary recent developments infrared camera (IRC), sensitive (TSOP), fiber Bragg grating (FBG) sensing provided, shedding light merits challenges while providing few possible future solutions. In addition, calibration methods remedies obtaining accurate measurements are discussed, thus better insight directions research.